DOI: 10.22184/1993-7296.FRos.2023.17.2.96.106

Gallium sulfides have a wide band gap in the range of 2.85–3.05 eV and are promising for use in the field of photovoltaics and optoelectronics, nonlinear optics, optoelectronics, terahertz devices, and also as the passivation layers in the group III–V semiconductor devices. In this paper, thin films of gallium sulfide GaxS1‑x were obtained for the first time by the plasma-­enhanced chemical vapor deposition (PECVD) using a chlorine-­involved transport reaction, while the direct high-purity elements (Ga and S) were applied as the original substances. The nonequilibrium low-temperature plasma of an RF discharge (40.68 MHz) at a reduced pressure (0.01 Torr) was the initiator of chemical transformations. The dependences of composition, surface morphology, structural and optical properties of the obtained films on the plasma discharge power were studied.