rus
TS_pub
technospheramag
technospheramag
ТЕХНОСФЕРА_РИЦ
Business People
A. A. Nefyodov
Domestic Manufacturer of Lasers and Optomechanics – LASSARD Company DOI: 10.22184/1993-7296.FRos.2023.17.2.90.93
Domestic Manufacturer of Lasers and Optomechanics – LASSARD Company DOI: 10.22184/1993-7296.FRos.2023.17.2.90.93
Technologies and Technology Equipment
L. A. Mochalov, M. A. Kudryashov, M. A. Vshivtsev, I. O. Prokhorov, P. A. Yunin, T. S. Sazanova, Yu. P. Kudryashova, V. M. Malyshev, A. D. Kulikov, V. M. Vorotyntsev
Structural and Optical Properties of Gallium Sulfide Thin Films Obtained by Plasma-Enhanced Chemical Vapor Deposition DOI: 10.22184/1993-7296.FRos.2023.17.2.96.106
Gallium sulfides have a wide band gap in the range of 2.85–3.05 eV and are promising for use in the field of photovoltaics and optoelectronics, nonlinear optics, optoelectronics, terahertz devices, and also as the passivation layers in the group III–V semiconductor devices. In this paper, thin films of gallium sulfide GaxS1‑x were obtained for the first time by the plasma-enhanced chemical vapor deposition (PECVD) using a chlorine-involved transport reaction, while the direct high-purity elements (Ga and S) were applied as the original substances. The nonequilibrium low-temperature plasma of an RF discharge (40.68 MHz) at a reduced pressure (0.01 Torr) was the initiator of chemical transformations. The dependences of composition, surface morphology, structural and optical properties of the obtained films on the plasma discharge power were studied.
Structural and Optical Properties of Gallium Sulfide Thin Films Obtained by Plasma-Enhanced Chemical Vapor Deposition DOI: 10.22184/1993-7296.FRos.2023.17.2.96.106
Gallium sulfides have a wide band gap in the range of 2.85–3.05 eV and are promising for use in the field of photovoltaics and optoelectronics, nonlinear optics, optoelectronics, terahertz devices, and also as the passivation layers in the group III–V semiconductor devices. In this paper, thin films of gallium sulfide GaxS1‑x were obtained for the first time by the plasma-enhanced chemical vapor deposition (PECVD) using a chlorine-involved transport reaction, while the direct high-purity elements (Ga and S) were applied as the original substances. The nonequilibrium low-temperature plasma of an RF discharge (40.68 MHz) at a reduced pressure (0.01 Torr) was the initiator of chemical transformations. The dependences of composition, surface morphology, structural and optical properties of the obtained films on the plasma discharge power were studied.
M. A. Bogachev, D. D. Vasiliev, K. M. Moiseev, M. V. Nazarenko
Processing of Optical Crystals and LEDs in Glow Discharge Plasma DOI: 10.22184/1993-7296.FRos.2023.17.2.108.112
Glow discharge plasma treatment is increasingly being used to clean the surfaces of materials from contamination, reduce surface roughness, increase surface energy and surface modification. The article presents the results of plasma processing of high-frequency and low-frequency gas discharge in the MPC RF‑12 plasma processing unit of optical crystal disks and cassettes of solid-state LEDs. The influence of parameters and modes of plasma treatment, namely power, time and type of working gas on the quality of treatment is estimated. It is shown that plasma treatment is a powerful tool for influencing the surface properties of optical crystals, is effective for removing metal oxide layers and is safe for adhesive joints of crystals with a base.
Processing of Optical Crystals and LEDs in Glow Discharge Plasma DOI: 10.22184/1993-7296.FRos.2023.17.2.108.112
Glow discharge plasma treatment is increasingly being used to clean the surfaces of materials from contamination, reduce surface roughness, increase surface energy and surface modification. The article presents the results of plasma processing of high-frequency and low-frequency gas discharge in the MPC RF‑12 plasma processing unit of optical crystal disks and cassettes of solid-state LEDs. The influence of parameters and modes of plasma treatment, namely power, time and type of working gas on the quality of treatment is estimated. It is shown that plasma treatment is a powerful tool for influencing the surface properties of optical crystals, is effective for removing metal oxide layers and is safe for adhesive joints of crystals with a base.
Tags: cleaning of optical elements low-temperature pulsed plasma optical crystals plasma surface treatment solid-state leds низкотемпературная импульсная плазма оптические кристаллы очистка оптических элементов плазменная обработка поверхности твердотельные светодиоды
Opto-electronic systems and complexes
A. V. Medvedev, A. V. Grinkevich, S. N. Knyazeva
Electro-Optical Surveillance and All-Round Camera Systems DOI: 10.22184/1993-7296.FRos.2023.17.2.146.166
The article considers a special class of optoelectronic devices, namely the television panoramic all-round viewing devices designed for 360° instantaneous viewing. Various design versions of panoramic devices are given, special attention is paid to the all-round television panoramic device with the upper hemisphere that provides an opportunity to observe the upper hemisphere without any dead areas using 4 television channels and solving the problem of UAV detection and counteraction in the anti-aircraft area.
Electro-Optical Surveillance and All-Round Camera Systems DOI: 10.22184/1993-7296.FRos.2023.17.2.146.166
The article considers a special class of optoelectronic devices, namely the television panoramic all-round viewing devices designed for 360° instantaneous viewing. Various design versions of panoramic devices are given, special attention is paid to the all-round television panoramic device with the upper hemisphere that provides an opportunity to observe the upper hemisphere without any dead areas using 4 television channels and solving the problem of UAV detection and counteraction in the anti-aircraft area.
Tags: all-round view anti-aircraft area instantaneous view area panoramic device uav detection зенитная область круговой обзор область мгновенного обзора обнаружение бпла панорамный прибор
Quantum Technologies
S. N. Mosentsov, A. V. Losev, V. V. Zavodilenko, A. A. Filyaev, I. D. Pavlov, N. V. Burov
Comparison of Domestic Single Photon Detectors by QRate With the An-alogues by ID Quantique DOI: 10.22184/1993-7296.FRos.2023.17.2.134.145
The article is devoted to the comparison of specifications of the single photon detectors manufactured by QRate (Russia) and ID Quantique (Switzerland). Their quantum efficiencies, dark count rates, and afterpulse probabilities have been examined in this work. The test results have showed the interchangeability of detectors and non-compliance of foreign detectors with the declared specifications and demonstrated the potential capacities of domestic development.
Comparison of Domestic Single Photon Detectors by QRate With the An-alogues by ID Quantique DOI: 10.22184/1993-7296.FRos.2023.17.2.134.145
The article is devoted to the comparison of specifications of the single photon detectors manufactured by QRate (Russia) and ID Quantique (Switzerland). Their quantum efficiencies, dark count rates, and afterpulse probabilities have been examined in this work. The test results have showed the interchangeability of detectors and non-compliance of foreign detectors with the declared specifications and demonstrated the potential capacities of domestic development.
Tags: id quantique qrate quantum technologies russian production single photon detector детектор одиночных фотонов квантовые технологии российское производство
News
N. L. Istomina
Quantum Initiative DOI: 10.22184/1993-7296.FRos.2023.17.2.88
The history of development, achievements and current trends in improving technological solutions to increase the transmission speed, energy and economic efficiency of the domestic fiber-optic communication networks are considered.
Quantum Initiative DOI: 10.22184/1993-7296.FRos.2023.17.2.88
The history of development, achievements and current trends in improving technological solutions to increase the transmission speed, energy and economic efficiency of the domestic fiber-optic communication networks are considered.
Tags: ber coherent detection data centers dwdm edfa error rate extra-long lines faraday effect fiber optic communication network flatness flexgrid modulation format osnr margin required osnr ropa spectral efficiency spectrum management spectrum shaping symbol rate волоконно-оптическая сеть связи дата-центры запас по osnr когерентный прием коэффициент ошибок неравномерность сверхдлинные линии символьная скорость спектральная эффективность требуемый osnr управление спектром формат модуляции формирование спектра эффект фарадея
Optoelectronic Instruments & Devices
A. V. Naumov, V. V. Startsev
Germanium as a Photonics Substance: from Lenses to Dislocation-Free Wafers DOI: 10.22184/1993-7296.FRos.2023.17.2.114.132
The article considers the process of development of germanium single crystal growth technology by the Czochralsky method, which allowed the application of germanium properties in IR optics and in gamma radiation detection. It is expected that germanium may return to optoelectronics again: recent developments in the cultivation of dislocation-free crystals have shown that germanium is a promising material for next-generation nanoscale electronic devices and for the integration of optical functions on logic circuits.
Germanium as a Photonics Substance: from Lenses to Dislocation-Free Wafers DOI: 10.22184/1993-7296.FRos.2023.17.2.114.132
The article considers the process of development of germanium single crystal growth technology by the Czochralsky method, which allowed the application of germanium properties in IR optics and in gamma radiation detection. It is expected that germanium may return to optoelectronics again: recent developments in the cultivation of dislocation-free crystals have shown that germanium is a promising material for next-generation nanoscale electronic devices and for the integration of optical functions on logic circuits.