rus
TS_pub
technospheramag
technospheramag
ТЕХНОСФЕРА_РИЦ
Nanophotonics
A. V. Yakuhina, V. V. Svetukhin, A. S. Kadochkin
Comparison of the Influence of Factors on the Q-factor of Mesa Structures of Optical Resonators Manufactured Using Silicon Technology DOI: 10.22184/1993-7296.FRos.2022.16.1.10.20
The results of a study of the influence of the surface roughness of the fiber layer on the Q-factor of the mesa structures of optical resonators operating in the whispering gallery mode, manufactured using silicon technology are presented. Two variants were studied as the material of the fiber layer: SiO2 and Si. The study of the influence of the value of the roughness of the lateral surface of the light-guide layer on the value of the figure of merit for each variant of the structure has been carried out. The roughness of the lateral surface of the light guide layer was investigated using AFM and SEM. For mesa structures of optical resonators with a fiber layer made of both silicon and silicon oxide, as a result of optimization of the basic technological processes, it was possible to achieve a decrease in the roughness value from 30–40 nm to 1–3 nm. The evaluation carried out by numerical simulation showed that the Q-factor of optical resonators with a light-guide layer of SiO2 can be achieved 109, by reducing the roughness of the side surface of the light-guide layer.
Comparison of the Influence of Factors on the Q-factor of Mesa Structures of Optical Resonators Manufactured Using Silicon Technology DOI: 10.22184/1993-7296.FRos.2022.16.1.10.20
The results of a study of the influence of the surface roughness of the fiber layer on the Q-factor of the mesa structures of optical resonators operating in the whispering gallery mode, manufactured using silicon technology are presented. Two variants were studied as the material of the fiber layer: SiO2 and Si. The study of the influence of the value of the roughness of the lateral surface of the light-guide layer on the value of the figure of merit for each variant of the structure has been carried out. The roughness of the lateral surface of the light guide layer was investigated using AFM and SEM. For mesa structures of optical resonators with a fiber layer made of both silicon and silicon oxide, as a result of optimization of the basic technological processes, it was possible to achieve a decrease in the roughness value from 30–40 nm to 1–3 nm. The evaluation carried out by numerical simulation showed that the Q-factor of optical resonators with a light-guide layer of SiO2 can be achieved 109, by reducing the roughness of the side surface of the light-guide layer.
Tags: integrated optics optical loss photonics quality factor roughness si silicon technology sio2 whispering gallery modes добротность интегральная оптика кремниевая технология моды шепчущей галереи оптические потери фотоника шероховатость
Opto-electronic systems and complexes
I. V. Znamensky, A. T. Tungushpaev
Regarding the Possibility of Detecting Space Objects in the Spectral Range of 8–12 mm DOI: 10.22184/1993-7296.FRos.2022.16.1.44.58
The result of calculating the threshold illumination of an optical-electronic system (OES) in the far infrared range of 8–12 μm is presented. A technique has been developed and a calculation has been made of the illumination of the OES entrance pupil from the signal of a space object (SO) of a cylindrical shape, illuminated by the Sun, and due to the own radiation of the SO.
Regarding the Possibility of Detecting Space Objects in the Spectral Range of 8–12 mm DOI: 10.22184/1993-7296.FRos.2022.16.1.44.58
The result of calculating the threshold illumination of an optical-electronic system (OES) in the far infrared range of 8–12 μm is presented. A technique has been developed and a calculation has been made of the illumination of the OES entrance pupil from the signal of a space object (SO) of a cylindrical shape, illuminated by the Sun, and due to the own radiation of the SO.
Tags: accumulation time atmosphere ir range matrix photodetector optoelectronic system overall brightness coefficient. photon signal-to-noise ratio threshold illumination атмосфера время накопления ик диапазон коэффициент габаритной яркости матричный фотоприемник оптико-электронная система отношение сигнал-шум пороговая освещенность фотон
M. A. Starasotnikau, R. V. Feodortsau
Accuracy of Determining the Elements of Interior Orientation of Optoelectronic Devices by Different Methods in Order to Form a Reference Vector Link DOI: 10.22184/1993-7296.FRos.2022.16.1.60.74
The article describes methods of geometric calibration of optoelectronic devices (OED) and ways to improve its accuracy. The results are used for the geometric calibration of the Earth remote sensing OED, the optical system of which is focused to infinity, and the image is formed by “stitching” images formed by several photodetectors. To expand the technological capabilities of calibration equipment, it is proposed to use a digital micromirror device (DMD) to form a test object, which allows you to create almost any shape and size of a test object pattern for the tasks of OED calibration. The geometric calibration of the layout of the multi-matrix OED using different methods of forming a reference bunch of vectors: sequential projection of the grid intersection with the theodolite onto the focal plane of the OED layout, test objects in the form of an array of points made by lithography on a glass substrate, and a test object formed by a DMD device. The features of mathematical processing for each method of forming a reference bunch of vectors are described. The estimation of the error of the geometric calibration of the OED model, performed with various methods of setting the reference bunch of vectors, was carried out: when using theodolite – 0.48"; array of points on a glass substrate – 0.21" and formed DMD – 0.09".
Accuracy of Determining the Elements of Interior Orientation of Optoelectronic Devices by Different Methods in Order to Form a Reference Vector Link DOI: 10.22184/1993-7296.FRos.2022.16.1.60.74
The article describes methods of geometric calibration of optoelectronic devices (OED) and ways to improve its accuracy. The results are used for the geometric calibration of the Earth remote sensing OED, the optical system of which is focused to infinity, and the image is formed by “stitching” images formed by several photodetectors. To expand the technological capabilities of calibration equipment, it is proposed to use a digital micromirror device (DMD) to form a test object, which allows you to create almost any shape and size of a test object pattern for the tasks of OED calibration. The geometric calibration of the layout of the multi-matrix OED using different methods of forming a reference bunch of vectors: sequential projection of the grid intersection with the theodolite onto the focal plane of the OED layout, test objects in the form of an array of points made by lithography on a glass substrate, and a test object formed by a DMD device. The features of mathematical processing for each method of forming a reference bunch of vectors are described. The estimation of the error of the geometric calibration of the OED model, performed with various methods of setting the reference bunch of vectors, was carried out: when using theodolite – 0.48"; array of points on a glass substrate – 0.21" and formed DMD – 0.09".
Tags: calibration digital micromirror device earth remote sensing elements of interior orientation optoelectronic device photodetector дистанционное зондирование земли калибровка оптико-электронный аппарат фотоприемник цифровое микрозеркальное устройство элементы внутреннего ориентирования
Optical Devices & Systems
I. P. Shishkin, A. P. Shkadarevich
Athermalized Television Lenses DOI: 10.22184/1993-7296.FRos.2022.16.1.38.43
The design of athermalized television lenses is presented for systems observations: 3‑lens F / 5.6 telephoto lens, 7‑lens F / 4 apochromat and 9‑lens F / 2.8 aperture. At calculation lenses have been read factors affecting on the value lens design resolution: size sensor, focal distance, relative hole. However, in real production, when assembling a lens structure, it is not always possible to achieve the calculated image quality. The sensitivity of optical schemes to design tolerances is considered.
Athermalized Television Lenses DOI: 10.22184/1993-7296.FRos.2022.16.1.38.43
The design of athermalized television lenses is presented for systems observations: 3‑lens F / 5.6 telephoto lens, 7‑lens F / 4 apochromat and 9‑lens F / 2.8 aperture. At calculation lenses have been read factors affecting on the value lens design resolution: size sensor, focal distance, relative hole. However, in real production, when assembling a lens structure, it is not always possible to achieve the calculated image quality. The sensitivity of optical schemes to design tolerances is considered.
Tags: athermalization optical transfer function television lenses атермализация оптическая передаточная функция телевизионные объективы
Optoelectronic Instruments & Devices
N. A. Kulchitsky, A. V. Naumov, V. V. Startsev
«Quantum Wells» Cooled Infrared Photodetectors – the State and Prospects of Development DOI: 10.22184/1993-7296.FRos.2022.16.1.22.36
In this paper the quantum wells infrared detectors (QWIP) of thermal imaging equipment are considered. These devices are in demand in the security surveillance systems and complexes, as well as in personal night vision and security systems. The QWs cooled photodetectors (PDs) for the spectral range 3–5 µm and 8–12 µm are of the special interest. A comparison of thermal detectors of various types from different world manufacturers is presented. An expert forecast of changes in the dynamics of market growth and its development trends is given.
«Quantum Wells» Cooled Infrared Photodetectors – the State and Prospects of Development DOI: 10.22184/1993-7296.FRos.2022.16.1.22.36
In this paper the quantum wells infrared detectors (QWIP) of thermal imaging equipment are considered. These devices are in demand in the security surveillance systems and complexes, as well as in personal night vision and security systems. The QWs cooled photodetectors (PDs) for the spectral range 3–5 µm and 8–12 µm are of the special interest. A comparison of thermal detectors of various types from different world manufacturers is presented. An expert forecast of changes in the dynamics of market growth and its development trends is given.